feb.1999 mitsubishi semiconductor thyristor ? CR08AS low power use non-insulated type, glass passivation type CR08AS application solid state relay, strobe flasher, ignitor, hybrid ic ?i t (av) ........................................................................ 0.8a ?v drm ..............................................................400v/600v ?i gt ......................................................................... 100 m a symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v maximum ratings 8 (marked ad) 400 500 320 400 320 12 (marked af) 600 720 480 600 480 symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t a =51 c ] 2 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c mg ratings 1.26 0.8 10 0.42 0.5 0.1 6 6 0.3 C40 ~ +125 C40 ~ +125 48 ] 1. with gate-to-cathode resistance r gk =1k w 2 1 3 1
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3 t 1 terminal t 2 terminal gate terminal 4.4?.1 1.5?.1 1.6?.2 0.4?.07 0.8 min 2.5?.1 3.9?.3 0.4 +0.03 ?.05 1 2 3 (back side) outline drawing dimensions in mm sot-89 0.5?.07 1.5?.1 1.5?.1
feb.1999 mitsubishi semiconductor thyristor ? CR08AS low power use non-insulated type, glass passivation type ] 2. soldering with ceramic plate (25mm 25mm t0.7). ] 3. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bc) the above values do not include the current flowing through the 1k w resistance between the gate and cathode. b 20 ~ 50 item i gt ( m a) a 1 ~ 30 c 40 ~ 100 electrical characteristics test conditions t j =125 c, v rrm applied, r gk =1k w t j =125 c, v drm applied, r gk =1k w t a =25 c, i tm =2.5a, instantaneous value t a =25 c, v d =6v, i t =0.1a ] 4 t j =125 c, v d =1/2v drm , r gk =1k w t j =25 c, v d =6v, i t =0.1a ] 4 t j =25 c, v d =12v, r gk =1k w junction to ambient ] 2 unit ma ma v v v m a ma c/w typ. 1.5 symbol i rrm i drm v tm v gt v gd i gt i h r th (j-a) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance limits min. 0.2 1 max. 0.5 0.5 1.5 0.8 100 ] 3 3 65 3v dc i gs i gt 6v dc 60 w v gt 2 1 tut 1k w r gk a3 a2 v1 a1 switch 1 : i gt measurement switch 2 : v gt measurement (inner resistance of voltage meter is about 1k w ) ] 4. i gt , v gt measurement circuit. switch 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 3 1 5 7 9 0 5 01 4 23 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t a = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? CR08AS low power use non-insulated type, glass passivation type 10 2 10 ? 10 0 10 1 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 10 1 23 57 10 2 23 57 23 10 ? v fgm = 6v v gt = 0.8v i gt = 100? (t j = 25?) p gm = 0.5w p g(av) = 0.1w v gd = 0.2v i fgm = 0.3a 160 60 ?0 ?0 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 ?0 ?0 20 80 0.2 0.5 0.9 060 40 100 typical example distribution 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q 360 q = 30 60 120 90 180 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (?/ w) time (s) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 23 10 ? 5710 ? 23 5710 ? 23 5710 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 aluminum board with soldering 25 25 t0.7 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 120 90 180 q 360 resistive, inductive loads natural convection aluminum board with soldering 25 25 t0.7 gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 mitsubishi semiconductor thyristor ? CR08AS low power use non-insulated type, glass passivation type allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q 360 q = 180 65?/ w 90?/ w r th( j ?a) = 200?/ w natural convection resistive, inductive loads 160 120 60 40 20 140 100 80 0 160 ?0 0 40 80 120 140 ?0 20 60 100 r gk = 1k w typical example 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 120 90 180 q q 360 resistive loads 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 120 90 180 270 dc q 360 resistive, inductive loads maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (?) average on-state current (a) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q q 360 q = 30 120 90 180 60 resistive loads natural convection aluminum board with soldering 25 25 t0.7 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 dc q = 30 120 180 270 60 90 q 360 resistive, inductive loads natural convection aluminum board with soldering 25 25 t0.7
feb.1999 mitsubishi semiconductor thyristor ? CR08AS low power use non-insulated type, glass passivation type 10 1 10 0 10 2 4.0 0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 23 10 ? 5710 0 23 5710 1 23 5710 2 0 80 100 120 40 60 20 typical example t j = 125? breakover voltage vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) breakover voltage ( r gk = r k w ) breakover voltage ( r gk = 1k w ) 23 10 0 5710 1 23 5710 2 23 5710 3 160 0 80 100 120 140 40 60 20 t j = 125? r gk = 1k w typical example 23 10 ? 5710 0 23 5710 1 23 5710 2 500 0 300 400 100 200 10 0 23 10 ? 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v d = 100v r l = 47 w r gk = 1k w t a = 25? typical example 60 ?0 ?0 ?0 0 20 40 80 100 120 140 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? holding current vs. junction temperature holding current (ma) junction temperature (?) holding current vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) holding current ( r gk = r k w ) holding current ( r gk = 1k w ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = vv/? ) breakover voltage ( dv/dt = 1v/? ) turn-on time vs. gate current turn-on time (?) gate current (ma) holding current vs. gate trigger current holding current (ma) gate trigger current (?) distribution i gt (25?) = 35? r gk = 1k w typical example # 1 t j = 25? t j = 25? typical example i gt (25?) i h (1k w ) # 1 25? 0.9ma
feb.1999 mitsubishi semiconductor thyristor ? CR08AS low power use non-insulated type, glass passivation type 40 30 15 10 5 35 25 20 0 160 0 40 80 120 140 20 60 100 v d = 50v, v r = 50v i t = 2a, r gk = 1k w typical example distribution turn-off time vs. junction temperature turn-off time (?) junction temperature (?) 160 120 100 40 60 20 0 160 ?0 ?0 20 80 140 120 80 140 060 40 100 typical example gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) repetitive peak reverse voltage vs. junction temperature junction temperature (?) thermal impedance vs. board dimensions thermal impedance (?/ w) board dimensions (mm) regular square one side 320 240 120 80 40 280 200 160 0 80 0 20 40 60 70 10 30 50 t0.7 aluminum board without epoxy plate 10 10 epoxy plate with copper foil 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 ? ) 10 2 10 0 10 1 24 357 10 2 24 357 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j = 25? typical example i gt (dc) # 1 10? # 2 65? # 1 # 2
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